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  Datasheet File OCR Text:
 High Speed DMOS N-Channel Switch
CORPORATION
SD403
FEATURES DESCRIPTION The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, (crss < 0.4pf typical) allowing for high speed switching (tr 1ns). The SD403 is a high gain device (19mmhos) and has good performance values for sample and hold circuits, video switches and switch drivers where lower capacitance and high speed switching are critical. ORDERING INFORMATION Part Package Temperature Range -55 to +125oC -55 to +125oC -55 to +125oC SD403BD Plastic TO-92 SD403CY SOT-143 Surface Mount XSD403 Sorted Chips in Carriers
* Ultra High Speed Switching . . . . . . . . . . . . . . . . . tr < 1ns * Very Low Capacitance. . . . . . . . . . . . . . crss 0.4pf typical * CMOS and TTL Compatible. Input. . . . . . 40 ohms typical * Low ON Resistance . . . . . . . . . . * Switch Drivers * Video Switches * Samples and Hold * Track and Hold * VHF/UHF Amplifiers
APPLICATIONS
PIN CONFIGURATION
SCHEMATIC DIAGRAM
DRAIN (2)
TO-92
GATE (3)
SOURCE (1)
D SG
TO-92
CD1-1
GATE (3) DRAIN (2)
DRAIN (2) BODY (4) GATE (3)
SOT-143
BODY (4) SOURCE (1)
PRODUCT MARKING SD403CY SD403
SOURCE (1)
SOT-143
SD403
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = +25oC unless otherwise noted) Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V +20V Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V +20V Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . 50mA Power Dissipation (at or below TA = +25oC) . . . . . . . . 300mW Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC Operating Junction and Storage Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
ELECTRICAL CHARACTERISTICS (TA = +25oC unless otherwise specified)
SYMBOL STATIC BVDSS ID(OFF) IGSS ID(ON) VGS(th) VDS(ON) rDS(ON) VDS(ON) rDS(ON) DYNAMIC gfs ciss coss crss td(on) tr t(OFF) Common-Source Forward Transconductance Common-Source Input Capacitance Common-Source Output Capacitance Common-Source Reverse Transfer Capacitance Turn ON Delay Time Rise Time Turn OFF Time 15 19 4.5 2.0 0.4 0.8 0.9 1.4 6.0 3.0 0.6 1.2 1.2 ns VDD = 10V, RL = 680 VG(ON) = 10V, RG = 51 CL = 1.5pF pf VDS = 10V, VGS = 0 f = 1MHz mS ID = 20mA VDS = 10V, f = 1KHz Pulse Test Drain-Source Breakdown Voltage Drain-Source OFF Leakage Current Gate-Source Leakage Current Drain-Source ON Current Gate-Source Threshold Voltage Drain-Source ON Voltage Drain-Source ON Resistance Drain-Source ON Voltage Drain-Source ON Resistance 80 0.3 140 140 40 40 120 1.5 175 175 60 60 15 25 1.0 1.0 V A A mA V mV ohms mV ohms ID = 1mA, VGS = 4.5V ID = 1.0A, VGS =0 VDS = 15V, VGS = 0 VGS = 20V, VDS = 0 VDS = 10V, VGS = 10 V Pulse Test ID = 1.0, VDS = VGS ID = 1mA, VGS = 2.4V CHARACTERISTICS MIN TYP MAX UNIT TEST CONDITIONS
SWITCHING TIMES TEST CIRCUIT
VDD RL VOUT INPUT PULSE _ t r < 0.5 nSEC PULSE WIDTH - 100 nSEC SAMPLING OSCILLOSCOPE t r < 0.36 nSEC Rin > 1M C in < 2.0 pF
TEST WAVEFORMS
VG(on) V in 0 10% t d(on) t off t fall t d(off) 90% 90%
VG 510 RG
t on tr VDD Vout ~ 0V ~ 10% 90%
51 OSCILLOSCOPE
10%
SD403
CORPORATION
TYPICAL PERFORMANCE CHARACTERISTICS (TA = +25oC unless otherwise noted)
ON DRAIN CURRENT -VSGATE-SOURCE VOLTAGE 200
r DS(on) -Drain-Source ON Resistance-(ohms) ID(on) -ON Drain Current-(mA)
DRAIN-SOURCE ON RESISTANCE -VSGATE-SOURCE VOLTAGE 175 I D = 1.0mA 150 125 100 75 50 TA = +125 oC 25 TA = +25 C 0 6.0 2.0 4.0 8.0 10 VGS-Gate-Source Voltage (Volts)
o
VDS = 10V PULSE TEST 160 80Sec 1% Duty Cycle 120 TA = +25 C 80 I D'Z' 7.5mA 40 TA = +125oC
o
0
4.0 6.0 8.0 10 2.0 VGS-Gate-Source Voltage (Volts)
FORWARD TRANSCONDUCTANCE -VSON DRAIN CURRENT 35
g fs -Forward Transconductance-(mmhos)
30 25 20 15 10 5.0
VDS = 10V f = 1KHz PULSE TEST 80 Sec 1% Duty Cycle
TA = +25 C
o
TA = +125 C
o
0
10
20
30
40
50
60
70
I D -Drain Current (mA)


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